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978-3-8439-1832-9, Reihe Elektrotechnik

Stefan Tappertzhofen
Redox and Mass Transport Phenomena in Resistively Switching Thin Films

172 Seiten, Dissertation Rheinisch-Westfälische Technische Hochschule Aachen (2014), Softcover, B5

Zusammenfassung / Abstract

As conventional memory and logic technology are approaching their scaling limitations in the near future, nonvolatile redox based resistive switches (ReRAM) attracted high attention due to a high potential of scalability and low power consumption. In this thesis, metal cation based ReRAM cells are analyzed in respect to electrochemical and physical processes, which are contributing to the resistive switching effect. Particular interest is paid to the ultrafast switching kinetics, quantum size effects and nonequilibrium states. The findings may gain deeper insight into the resistive switching effect and also provide general guidance for the design of novel nanoionic devices.