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ISBN 978-3-8439-5036-7

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978-3-8439-5036-7, Reihe Elektrotechnik

Klaas Strempel
3D GaN nanostructures for electronic and optoelectronic devices

175 Seiten, Dissertation Technische Universität Braunschweig (2022), Softcover, A5

Zusammenfassung / Abstract

With its great successes in light-emitting diodes (LEDs) and transistors, gallium nitride (GaN) has become an established material in modern semiconductor technology. While commercial GaN devices are almost exclusively based on planar technology, GaN micro- and nanostructures represent an interesting playground for the development of novel device concepts. In this work, both top-down etching and epitaxial bottom-up growth approaches were applied to fabricate regularly arranged GaN fin structures yielding a versatile 3D platform for various potential applications. Besides their numerous potential advantages, the three-dimensionality significantly increases the device complexity and requires new technical solutions. Based on the example of vertical field-effect transistors (FETs) and core-shell LEDs, different 3D processing techniques were established and evaluated, paving the way towards future 3D GaN based devices.